BFU590G

BFU590GX vs BFU590G vs BFU590GX-CUT TAPE

 
PartNumberBFU590GXBFU590GBFU590GX-CUT TAPE
DescriptionRF Bipolar Transistors NPN wideband silicon RF transistor
ManufacturerNXPNXP Semiconductors-
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF-
RoHSY--
Transistor TypeBipolar WidebandNPN-
TechnologySiSi-
Transistor PolarityNPNNPN-
DC Collector/Base Gain hfe Min60--
Collector Emitter Voltage VCEO Max16 V--
Emitter Base Voltage VEBO2 V--
Continuous Collector Current80 mA80 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
ConfigurationSingleDual-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
PackagingReelDigi-ReelR Alternate Packaging-
Collector Base Voltage VCBO24 V--
DC Current Gain hFE Max130--
Operating Frequency900 MHz900 MHz-
Operating Temperature Range- 40 C to + 150 C--
TypeWideband RF Transistor--
BrandNXP Semiconductors--
Gain Bandwidth Product fT8.5 GHz--
Maximum DC Collector Current300 mA300 mA-
Pd Power Dissipation2000 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # Aliases934067975115--
Unit Weight0.003447 oz--
Series-NPI Part Build_RF Transistors-
Package Case-TO-261-4, TO-261AA-
Mounting Type-Surface Mount-
Supplier Device Package-SC-73-
Power Max-2W-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-12V-
DC Current Gain hFE Min Ic Vce-60 @ 80mA, 8V-
Frequency Transition-8.5GHz-
Noise Figure dB Typ f---
Gain-8dB-
Pd Power Dissipation-2000 mW-
Collector Emitter Voltage VCEO Max-16 V-
Emitter Base Voltage VEBO-2 V-
DC Collector Base Gain hfe Min-60-
Manufacturer Part # Description RFQ
NXP Semiconductors
NXP Semiconductors
BFU590GX RF Bipolar Transistors NPN wideband silicon RF transistor
BFU590G New and Original
BFU590GX RF TRANS NPN 12V 8.5GHZ SOT223
BFU590GX-CUT TAPE New and Original
Top