BFU590Q

BFU590QX vs BFU590Q vs BFU590QX-CUT TAPE

 
PartNumberBFU590QXBFU590QBFU590QX-CUT TAPE
DescriptionRF Bipolar Transistors NPN wideband silicon RF transistor
ManufacturerNXPNXP Semiconductors-
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF-
RoHSY--
Transistor TypeBipolar WidebandNPN-
TechnologySiSi-
Transistor PolarityNPNNPN-
DC Collector/Base Gain hfe Min60--
Collector Emitter Voltage VCEO Max16 V--
Emitter Base Voltage VEBO2 V--
Continuous Collector Current80 mA80 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
ConfigurationSingleDual-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT89-3--
PackagingReelDigi-ReelR Alternate Packaging-
Collector Base Voltage VCBO24 V--
DC Current Gain hFE Max130--
Operating Frequency900 MHz900 MHz-
Operating Temperature Range- 40 C to + 150 C--
TypeWideband RF Transistor--
BrandNXP Semiconductors--
Gain Bandwidth Product fT8 GHz--
Maximum DC Collector Current300 mA300 mA-
Pd Power Dissipation2000 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # Aliases934067977115--
Unit Weight0.001423 oz--
Series-NPI Part Build_RF Transistors-
Package Case-TO-243AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-89-3-
Power Max-2W-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-12V-
DC Current Gain hFE Min Ic Vce-60 @ 80mA, 8V-
Frequency Transition-8GHz-
Noise Figure dB Typ f---
Gain-6.5dB-
Pd Power Dissipation-2000 mW-
Collector Emitter Voltage VCEO Max-16 V-
Emitter Base Voltage VEBO-2 V-
DC Collector Base Gain hfe Min-60-
Manufacturer Part # Description RFQ
NXP Semiconductors
NXP Semiconductors
BFU590QX RF Bipolar Transistors NPN wideband silicon RF transistor
BFU590Q New and Original
BFU590QX RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto
BFU590QX-CUT TAPE New and Original
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