PartNumber | BFU660F,115 | BFU660F | BFU660F115 |
Description | RF Bipolar Transistors Single NPN 21GHz | RF Small Signal Bipolar Transistor 0.06A I(C) Single, X Band, Silicon, NPN | |
Manufacturer | NXP | NXP | - |
Product Category | RF Bipolar Transistors | RF Transistors (BJT) | - |
RoHS | Y | - | - |
Transistor Type | Bipolar | - | - |
Technology | Si | - | - |
Transistor Polarity | NPN | - | - |
DC Collector/Base Gain hfe Min | 90 | - | - |
Collector Emitter Voltage VCEO Max | 5.5 V | - | - |
Emitter Base Voltage VEBO | 2.5 V | - | - |
Continuous Collector Current | 30 mA | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Configuration | Single | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-343F | - | - |
Packaging | Reel | - | - |
Type | RF Bipolar Small Signal | - | - |
Brand | NXP Semiconductors | - | - |
Gain Bandwidth Product fT | 21 GHz | - | - |
Pd Power Dissipation | 225 mW | - | - |
Product Type | RF Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 934064611115 | - | - |
Unit Weight | 0.000235 oz | - | - |