PartNumber | BGAV1A10E6327XTSA1 | BGAU1A10E6327XTSA1 |
Description | RF Amplifier RF SILICON MMIC | RF Amplifier RF SILICON MMIC |
Manufacturer | Infineon | Infineon |
Product Category | RF Amplifier | RF Amplifier |
RoHS | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | ATSLP | ATSLP |
Type | LNA | LNA |
Operating Frequency | 3.4 GHz to 3.8 GHz | 5.15 GHz to 5.914 GHz |
P1dB Compression Point | 3 dBm | 3 dBm |
Gain | 22 dB | 27 dB |
Operating Supply Voltage | 1.8 V | 1.8 V |
NF Noise Figure | 1.3 dB | 1.6 dB |
Test Frequency | 3500 MHz | 5500 MHz |
OIP3 Third Order Intercept | 32 dBm | 30 dBm |
Operating Supply Current | 5 mA | 5 mA |
Minimum Operating Temperature | - 30 C | - 30 C |
Maximum Operating Temperature | + 85 C | + 85 C |
Packaging | Reel | Reel |
Brand | Infineon Technologies | Infineon Technologies |
Number of Channels | 1 Channel | 1 Channel |
Input Return Loss | 13 dB | 20 dB |
Isolation dB | 32 dB | 38 dB |
Moisture Sensitive | Yes | Yes |
Pd Power Dissipation | 90 mW | 90 mW |
Product Type | RF Amplifier | RF Amplifier |
Factory Pack Quantity | 4500 | 4500 |
Subcategory | Wireless & RF Integrated Circuits | Wireless & RF Integrated Circuits |
Part # Aliases | BGA E6327 SP001628074 V1A10 | BGA E6327 SP001628070 U1A10 |