 |  | |
| PartNumber | BGA7L1N6E6327XTSA1 | BGA7L1N6E6327 |
| Description | RF Amplifier RF SILICON MMIC | |
| Manufacturer | Infineon | - |
| Product Category | RF Amplifier | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TSNP-6 | - |
| Type | LNA for LTE | - |
| Technology | SiGe | - |
| Operating Frequency | 728 MHz to 960 MHz | - |
| P1dB Compression Point | - 2 dBm | - |
| Gain | 13.3 dB | - |
| Operating Supply Voltage | 3.3 V | - |
| NF Noise Figure | 0.9 dB | - |
| Operating Supply Current | 4.5 mA | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 85 C | - |
| Packaging | Reel | - |
| Brand | Infineon Technologies | - |
| Input Return Loss | 25 dB | - |
| Isolation dB | 25 dB | - |
| Pd Power Dissipation | 60 mW | - |
| Product Type | RF Amplifier | - |
| Factory Pack Quantity | 15000 | - |
| Subcategory | Wireless & RF Integrated Circuits | - |
| Part # Aliases | 7L1N6 BGA E6327 SP001109134 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BGA7L1N6E6327XTSA1 | RF Amplifier RF SILICON MMIC | |
| BGA7L1N6E6327 | New and Original | ||
| BGA7L1N6E6327XTSA1 | RF Amplifier RF SILICON MMIC |