PartNumber | BLV31 | BLV33 | BLV32F |
Description | RF Bipolar Transistors RF Transistor | RF Bipolar Transistors RF Transistor | RF Bipolar Transistors RF Transistor |
Manufacturer | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
RoHS | Y | Y | Y |
Transistor Type | Bipolar Power | Bipolar Power | Bipolar Power |
Technology | Si | Si | Si |
Transistor Polarity | NPN | NPN | NPN |
DC Collector/Base Gain hfe Min | 15 | 15 | 20 |
Collector Emitter Voltage VCEO Max | 30 V | 33 V | 32 V |
Emitter Base Voltage VEBO | 4 V | 4 V | 4 V |
Continuous Collector Current | 3 A | 12.5 A | 4 A |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
Mounting Style | Through Hole | Through Hole | Screw Mount |
Package / Case | SOT-122A | SOT-147 | 316-01 |
Packaging | Tray | Tray | Tray |
Operating Frequency | 224 MHz | 224 MHz | 224 MHz |
Type | RF Bipolar Power | RF Bipolar Power | RF Bipolar Power |
Brand | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. |
Maximum DC Collector Current | 6 A | 20 A | - |
Pd Power Dissipation | 7 W | 132 W | 82 W |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
Subcategory | Transistors | Transistors | Transistors |