 | | |
| PartNumber | BS170-D27Z | BS170-D26Z |
| Description | MOSFET N-Ch Enhancement Mode Field Effect | MOSFET N-Ch Enhancement Mode Field Effect |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 500 mA | 500 mA |
| Rds On Drain Source Resistance | 1.2 Ohms | 1.2 Ohms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 830 mW | 830 mW |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 5.33 mm | 5.33 mm |
| Length | 5.2 mm | 5.2 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal |
| Series | BS170 | BS170 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | FET | FET |
| Width | 4.19 mm | 4.19 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 0.32 S | 0.32 S |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | BS170_D27Z | BS170_D26Z |
| Unit Weight | 0.010088 oz | 0.010088 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
BS170-D27Z | MOSFET N-Ch Enhancement Mode Field Effect | |
| BS170-D26Z | MOSFET N-Ch Enhancement Mode Field Effect | ||
ON Semiconductor |
BS170-D26Z | MOSFET N-CH 60V 500MA TO-92 | |
| BS170-D27Z | MOSFET N-CH 60V 500MA TO-92 | ||
| BS170-D26Z-CUT TAPE | New and Original |