BS870-7-F

BS870-7-F vs BS870-7-F , TDA1308AT/N2 vs BS870-7-F-31

 
PartNumberBS870-7-FBS870-7-F , TDA1308AT/N2BS870-7-F-31
DescriptionMOSFET 60V 310mW
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current250 mA--
Rds On Drain Source Resistance5 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesBS870--
Transistor Type1 N-Channel--
TypeEnhancement Mode Field Effect Transistor--
Width1.3 mm--
BrandDiodes Incorporated--
Forward Transconductance Min80 mS--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time5 ns--
Typical Turn On Delay Time2 ns--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
BS870-7-F MOSFET 60V 310mW
BS870-7-F , TDA1308AT/N2 New and Original
BS870-7-F Darlington Transistors MOSFET 60V 310mW
BS870-7-F-31 New and Original
BS870-7-F-79 New and Original
BS870-7-F/K70 New and Original
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