 | | | |
| PartNumber | BSC028N06NS | BSC028N06LS3 G | BSC028N06LS3GATMA1 |
| Description | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | TDSON-8 | PG-TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 2.8 mOhms | 2.3 mOhms | 2.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 10 V |
| Qg Gate Charge | 37 nC | 175 nC | 132 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 83 W | 139 W | 139 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 5 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 50 S | 60 S | 60 S |
| Fall Time | 8 ns | 19 ns | 19 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 38 ns | 17 ns | 17 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 77 ns | 77 ns |
| Typical Turn On Delay Time | 11 ns | 19 ns | 19 ns |
| Part # Aliases | BSC028N06NSATMA1 BSC28N6NSXT SP000917416 | BSC028N06LS3GATMA1 BSC28N6LS3GXT SP000453652 | BSC028N06LS3 BSC28N6LS3GXT G SP000453652 |
| Unit Weight | 0.003527 oz | 0.003527 oz | 0.003527 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC028N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSC028N06NSATMA1 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC028N06NS | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC028N06LS3 G | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC028N06LS3GATMA1 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC028N06LS3 G | Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP | ||
| BSC028N06LS3GATMA1 | MOSFET N-CH 60V 100A TDSON-8 | ||
| BSC028N06NS | Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: BSC028N06NS) | ||
| BSC028N06NSATMA1 | MOSFET N-CH 60V 23A TDSON-8 | ||
| BSC028N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
| BSC029N025S G | MOSFET N-CH 25V 100A TDSON-8 | ||
Infineon Technologies |
BSC029N025S G | MOSFET N-Ch 25V 24A TDSON-8 | |
| BSC028N06LS 3G | New and Original | ||
| BSC028N06LS3G , TDA6503A | New and Original | ||
| BSC029N025SGATMA1 | New and Original | ||
| BSC028N06LS3G | 23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC028N06NS3G | New and Original | ||
| BSC029N025SG | Power Field-Effect Transistor, 24A I(D), 25V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |