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BSC025N03MSG

BSC025N03MSGATMA1 vs BSC025N03MSG vs BSC025N03MSGATMA1 , TDA5

 
PartNumberBSC025N03MSGATMA1BSC025N03MSGBSC025N03MSGATMA1 , TDA5
DescriptionMOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3MPower Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineon-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance6.7 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge27 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation35 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3M--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min28 S--
Fall Time2.4 ns--
Product TypeMOSFET--
Rise Time3 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time4.3 ns--
Part # AliasesBSC025N03MS BSC25N3MSGXT G SP000311505--
Unit Weight0.021341 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies 		BSC025N03MSGATMA1 MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M
BSC025N03MSGATMA1 MOSFET N-CH 30V 100A TDSON-8
BSC025N03MSG Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC025N03MSGATMA1 , TDA5 New and Original
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