PartNumber | BSC026NE2LS5ATMA1 | BSC026NE2LS5 | BSC026NE2LS5ATMA1-CUT TAPE |
Description | MOSFET LV POWER MOS | Trans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: BSC026NE2LS5) | |
Manufacturer | Infineon | Infineon Technologies | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | - | - |
Id Continuous Drain Current | 82 A | - | - |
Rds On Drain Source Resistance | 4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 16 V | - | - |
Qg Gate Charge | 12 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 29 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | - | - |
Length | 5.9 mm | - | - |
Series | OptiMOS 5 | - | - |
Width | 5.15 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 55 S | - | - |
Fall Time | 2 ns | 2 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 3 ns | 3 ns | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns | 13 ns | - |
Typical Turn On Delay Time | 3 ns | 3 ns | - |
Part # Aliases | BSC026NE2LS5 SP001212432 | - | - |
Part Aliases | - | BSC026NE2LS5 SP001212432 | - |
Package Case | - | TDSON-8 | - |
Pd Power Dissipation | - | 29 W | - |
Vgs Gate Source Voltage | - | +/- 16 V | - |
Id Continuous Drain Current | - | 82 A | - |
Vds Drain Source Breakdown Voltage | - | 25 V | - |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
Rds On Drain Source Resistance | - | 4 mOhms | - |
Qg Gate Charge | - | 12 nC | - |
Forward Transconductance Min | - | 55 S | - |