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| PartNumber | BSC028N06NSTATMA1 | BSC028N06NSATMA1 | BSC028N06NS |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | TDSON-8 | PG-TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 2.8 mOhms | 2.5 mOhms | 2.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | 2.1 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 10 V |
| Qg Gate Charge | 37 nC | 49 nC | 37 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 83 W | 83 W | 83 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 50 S | 50 S | 50 S |
| Fall Time | 8 ns | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 38 ns | 38 ns | 38 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 19 ns | 19 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 11 ns |
| Part # Aliases | BSC028N06NST SP001666498 | BSC028N06NS BSC28N6NSXT SP000917416 | BSC028N06NSATMA1 BSC28N6NSXT SP000917416 |
| Tradename | - | OptiMOS | OptiMOS |
| Height | - | 1.27 mm | 1.27 mm |
| Length | - | 5.9 mm | 5.9 mm |
| Product | - | OptiMOS Power | - |
| Series | - | OptiMOS 5 | OptiMOS 5 |
| Type | - | OptiMOS Power Transistor | - |
| Width | - | 5.15 mm | 5.15 mm |
| Unit Weight | - | - | 0.003527 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC028N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSC028N06NSATMA1 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC028N06NS | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC028N06NSATMA1 | MOSFET N-CH 60V 23A TDSON-8 | ||
| BSC028N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
| BSC028N06NS | Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: BSC028N06NS) | ||
| BSC028N06NS3G | New and Original |