BSC037

BSC037N08NS5ATMA1 vs BSC037N08NS5TATMA1 vs BSC037N025S G

 
PartNumberBSC037N08NS5ATMA1BSC037N08NS5TATMA1BSC037N025S G
DescriptionMOSFET N-Ch 80V 100A TDSON-8MOSFET TRENCH 40<-<100VMOSFET N-CH 25V 100A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance3.7 mOhms3.7 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V2.2 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge46 nC58 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation114 W114 W-
ConfigurationSingle--
Channel ModeEnhancementEnhancement-
TradenameOptiMOS--
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 5BSC037N08-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min47 S47 S-
Fall Time7 ns7 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns10 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time14 ns14 ns-
Part # AliasesBSC037N08NS5 SP001294988BSC037N08NS5T SP004475134-
Unit Weight0.017870 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC037N08NS5ATMA1 MOSFET N-Ch 80V 100A TDSON-8
BSC037N08NS5TATMA1 MOSFET TRENCH 40<-<100V
BSC037N025S G MOSFET N-CH 25V 100A TDSON-8
BSC037N08NS5ATMA1 RF Bipolar Transistors MOSFET N-Ch 80V 100A TDSON-8
BSC037N025S New and Original
BSC037N03LSCG New and Original
BSC037N03MSCG New and Original
BSC037N08NS5 Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP
Top