 |  | | |
| PartNumber | BSC046N02KS G | BSC046N02KS | BSC046N02KSG |
| Description | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | 19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET | |
| Manufacturer | Infineon | INFINEON | INFINEON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 19 A | - | - |
| Rds On Drain Source Resistance | 4.6 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 6 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 117 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 34 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | BSC046N02KSGAUMA1 BSC46N2KSGXT SP000379666 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC046N02KS G | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | |
| BSC046N02KSGAUMA1 | MOSFET N-CH 20V 80A TDSON-8 | ||
Infineon Technologies |
BSC046N02KSGAUMA1 | MOSFET LV POWER MOS | |
| BSC046N02KS | New and Original | ||
| BSC046N02KS G | MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2 | ||
| BSC046N02KSG | 19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET |