BSC054

BSC054N04NS G vs BSC054N04NS vs BSC054N04NSG

 
PartNumberBSC054N04NS GBSC054N04NSBSC054N04NSG
DescriptionMOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current81 A--
Rds On Drain Source Resistance5.4 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge26 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation57 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min34 S--
Fall Time3.6 ns3.6 ns-
Product TypeMOSFET--
Rise Time2.6 ns2.6 ns-
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns16 ns-
Typical Turn On Delay Time11 ns11 ns-
Part # AliasesBSC054N04NSGATMA1 BSC54N4NSGXT SP000354808--
Unit Weight0.003527 oz--
Part Aliases-BSC054N04NSGATMA1 BSC054N04NSGXT SP000354808-
Package Case-TDSON-8-
Pd Power Dissipation-2.5 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-17 A-
Vds Drain Source Breakdown Voltage-40 V-
Rds On Drain Source Resistance-5.4 mOhms-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC054N04NS G MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
BSC054N04NSGATMA1 MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
BSC054N04NSGATMA1 MOSFET N-CH 40V 81A TDSON-8
BSC054N04NS New and Original
BSC054N04NS G MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
BSC054N04NSG New and Original
BSC054N04NSGAT New and Original
BSC054N04NSGATMA1 , TDA8 New and Original
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