BSC054N04NSG

BSC054N04NSGATMA1 vs BSC054N04NSG vs BSC054N04NSGAT

 
PartNumberBSC054N04NSGATMA1BSC054N04NSGBSC054N04NSGAT
DescriptionMOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current81 A--
Rds On Drain Source Resistance4.5 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge34 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation57 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS-OptiMOS
PackagingReel-Digi-ReelR Alternate Packaging
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3-OptiMOS
Transistor Type1 N-Channel-1 N-Channel
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min34 S--
Fall Time3.6 ns--
Product TypeMOSFET--
Rise Time2.6 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesBSC054N04NS BSC54N4NSGXT G SP000354808--
Part Aliases--BSC054N04NS BSC054N04NSGXT G SP000354808
Package Case--8-PowerTDFN
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--PG-TDSON-8
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--57W
Drain to Source Voltage Vdss--40V
Input Capacitance Ciss Vds--2800pF @ 20V
FET Feature--Standard
Current Continuous Drain Id 25°C--17A (Ta), 81A (Tc)
Rds On Max Id Vgs--5.4 mOhm @ 50A, 10V
Vgs th Max Id--4V @ 27μA
Gate Charge Qg Vgs--34nC @ 10V
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC054N04NSGATMA1 MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
BSC054N04NSGATMA1 MOSFET N-CH 40V 81A TDSON-8
BSC054N04NSG New and Original
BSC054N04NSGAT New and Original
BSC054N04NSGATMA1 , TDA8 New and Original
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