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BSC060N10NS3G

BSC060N10NS3GATMA1 vs BSC060N10NS3G vs BSC060N10NS3GATMA1 , TDA

 
PartNumberBSC060N10NS3GATMA1BSC060N10NS3GBSC060N10NS3GATMA1 , TDA
DescriptionMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3Trans MOSFET N-CH 100V 14.9A 8-Pin TDSON T/R (Alt: BSC060N10NS3 G)
ManufacturerInfineonINFINEO-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance5.3 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge68 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min43 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time20 ns--
Part # AliasesBSC060N10NS3 BSC6N1NS3GXT G SP000446584--
Unit Weight0.004030 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies 		BSC060N10NS3GATMA1 MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
BSC060N10NS3GATMA1 MOSFET N-CH 100V 90A TDSON-8
BSC060N10NS3G Trans MOSFET N-CH 100V 14.9A 8-Pin TDSON T/R (Alt: BSC060N10NS3 G)
BSC060N10NS3GATMA1 , TDA New and Original
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