BSC067N06LS3G

BSC067N06LS3GATMA1 vs BSC067N06LS3G(SP00045108 vs BSC067N06LS3G

 
PartNumberBSC067N06LS3GATMA1BSC067N06LS3G(SP00045108BSC067N06LS3G
DescriptionMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3MOSFET N-CH 15A 60V OPTIMOS3 TDSON8EP, RL
ManufacturerInfineon-INFINEON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance6.7 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge67 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation69 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min38 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time37 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesBSC067N06LS3 BSC67N6LS3GXT G SP000451084--
Unit Weight0.003527 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC067N06LS3GATMA1 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC067N06LS3GATMA1 MOSFET N-CH 60V 50A TDSON-8
BSC067N06LS3G(SP00045108 New and Original
BSC067N06LS3GATMA1 , TDA New and Original
BSC067N06LS3GATMA1/INFIN New and Original
BSC067N06LS3GATMA1INFINE New and Original
BSC067N06LS3G MOSFET N-CH 15A 60V OPTIMOS3 TDSON8EP, RL
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