BSC0901NSI

BSC0901NSIXT vs BSC0901NSI vs BSC0901NSIATMA1

 
PartNumberBSC0901NSIXTBSC0901NSIBSC0901NSIATMA1
DescriptionMOSFET N-Ch 30V 100A TDSON-8MOSFET N-Ch 30V 100A TDSON-8MOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8TDSON-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance1.7 mOhms1.7 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge41 nC41 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W69 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min65 S65 S-
Fall Time4.6 ns4.6 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time7.2 ns7.2 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns27 ns-
Typical Turn On Delay Time5 ns5 ns-
Part # AliasesBSC0901NSIATMA1 SP000819818BSC0901NSIATMA1 BSC91NSIXT SP000819818BSC0901NSI BSC91NSIXT SP000819818
Unit Weight-0.004176 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC0901NSIXT MOSFET N-Ch 30V 100A TDSON-8
BSC0901NSI MOSFET N-Ch 30V 100A TDSON-8
BSC0901NSIATMA1 MOSFET N-CH 30V 28A 8TDSON
Infineon Technologies
Infineon Technologies
BSC0901NSIATMA1 MOSFET LV POWER MOS
BSC0901NSI Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC0901NSI)
Top