PartNumber | BSC0901NSIXT | BSC0901NSI | BSC0901NSIATMA1 |
Description | MOSFET N-Ch 30V 100A TDSON-8 | MOSFET N-Ch 30V 100A TDSON-8 | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 1.7 mOhms | 1.7 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 41 nC | 41 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 69 W | 69 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 65 S | 65 S | - |
Fall Time | 4.6 ns | 4.6 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7.2 ns | 7.2 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 27 ns | 27 ns | - |
Typical Turn On Delay Time | 5 ns | 5 ns | - |
Part # Aliases | BSC0901NSIATMA1 SP000819818 | BSC0901NSIATMA1 BSC91NSIXT SP000819818 | BSC0901NSI BSC91NSIXT SP000819818 |
Unit Weight | - | 0.004176 oz | - |