BSC0906

BSC0906NS vs BSC0906 vs BSC0906NS 0906NS

 
PartNumberBSC0906NSBSC0906BSC0906NS 0906NS
DescriptionMOSFET N-Ch 30V 63A TDSON-8 OptiMOS
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current63 A--
Rds On Drain Source Resistance4.5 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation30 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min40 S--
Fall Time6.4 ns3 ns-
Product TypeMOSFET--
Rise Time6.8 nS3.8 ns-
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 nS17 nS-
Typical Turn On Delay Time8.4 ns--
Part # AliasesBSC0906NSATMA1 BSC96NSXT SP000893360--
Unit Weight0.003527 oz--
Series-OptiMOS-
Part Aliases-BSC0906NSATMA1 BSC0906NSXT SP000893360-
Package Case-TDSON-8-
Pd Power Dissipation-30 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-63 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-4.5 mOhms-
Qg Gate Charge-13 nC-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC0906NS MOSFET N-Ch 30V 63A TDSON-8 OptiMOS
BSC0906NSATMA1 MOSFET N-CH 30V 18A 8TDSON
Infineon Technologies
Infineon Technologies
BSC0906NSATMA1 MOSFET LV POWER MOS
BSC0906 New and Original
BSC0906NS Trans MOSFET N-CH 30V 18A 8-Pin TDSON T/R (Alt: BSC0906NS)
BSC0906NS 0906NS New and Original
BSC0906NS E8189 Trans MOSFET N-CH 30V 18A 8-Pin TDSON T/R (Alt: BSC0906NS E8189)
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