BSC093N04LSG

BSC093N04LSG vs BSC093N04LSGATMA1 vs BSC093N04LSGATMA1 , TDZ

 
PartNumberBSC093N04LSGBSC093N04LSGATMA1BSC093N04LSGATMA1 , TDZ
Description40V,49A,N Channel Power MOSFETMOSFET N-CH 40V 49A TDSON-8
ManufacturerINFInfineon Technologies-
Product CategoryFETs - SingleFETs - Single-
Series-OptiMOS-
Packaging-Digi-ReelR Alternate Packaging-
Part Aliases-BSC093N04LS BSC093N04LSGXT G SP000387929-
Mounting Style-SMD/SMT-
Tradename-OptiMOS-
Package Case-8-PowerTDFN-
Technology-Si-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-1 Channel-
Supplier Device Package-PG-TDSON-8-
Configuration-Single-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-35W-
Transistor Type-1 N-Channel-
Drain to Source Voltage Vdss-40V-
Input Capacitance Ciss Vds-1900pF @ 20V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-13A (Ta), 49A (Tc)-
Rds On Max Id Vgs-9.3 mOhm @ 40A, 10V-
Vgs th Max Id-2V @ 14μA-
Gate Charge Qg Vgs-24nC @ 10V-
Pd Power Dissipation-35 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-2.8 ns-
Rise Time-2.4 ns-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-49 A-
Vds Drain Source Breakdown Voltage-40 V-
Vgs th Gate Source Threshold Voltage-2 V-
Rds On Drain Source Resistance-9.3 mOhms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-16 ns-
Typical Turn On Delay Time-3.6 ns-
Qg Gate Charge-18 nC-
Forward Transconductance Min-67 S-
Channel Mode-Enhancement-
Manufacturer Part # Description RFQ
BSC093N04LSG 40V,49A,N Channel Power MOSFET
BSC093N04LSGATMA1 , TDZ New and Original
BSC093N04LSGATMA1-CUT TAPE New and Original
Infineon Technologies
Infineon Technologies
BSC093N04LSGATMA1 MOSFET N-CH 40V 49A TDSON-8
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