PartNumber | BSC093N04LSG | BSC093N04LSGATMA1 | BSC093N04LSGATMA1 , TDZ |
Description | 40V,49A,N Channel Power MOSFET | MOSFET N-CH 40V 49A TDSON-8 | |
Manufacturer | INF | Infineon Technologies | - |
Product Category | FETs - Single | FETs - Single | - |
Series | - | OptiMOS | - |
Packaging | - | Digi-ReelR Alternate Packaging | - |
Part Aliases | - | BSC093N04LS BSC093N04LSGXT G SP000387929 | - |
Mounting Style | - | SMD/SMT | - |
Tradename | - | OptiMOS | - |
Package Case | - | 8-PowerTDFN | - |
Technology | - | Si | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Number of Channels | - | 1 Channel | - |
Supplier Device Package | - | PG-TDSON-8 | - |
Configuration | - | Single | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 35W | - |
Transistor Type | - | 1 N-Channel | - |
Drain to Source Voltage Vdss | - | 40V | - |
Input Capacitance Ciss Vds | - | 1900pF @ 20V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 13A (Ta), 49A (Tc) | - |
Rds On Max Id Vgs | - | 9.3 mOhm @ 40A, 10V | - |
Vgs th Max Id | - | 2V @ 14μA | - |
Gate Charge Qg Vgs | - | 24nC @ 10V | - |
Pd Power Dissipation | - | 35 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 55 C | - |
Fall Time | - | 2.8 ns | - |
Rise Time | - | 2.4 ns | - |
Vgs Gate Source Voltage | - | +/- 20 V | - |
Id Continuous Drain Current | - | 49 A | - |
Vds Drain Source Breakdown Voltage | - | 40 V | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Rds On Drain Source Resistance | - | 9.3 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 16 ns | - |
Typical Turn On Delay Time | - | 3.6 ns | - |
Qg Gate Charge | - | 18 nC | - |
Forward Transconductance Min | - | 67 S | - |
Channel Mode | - | Enhancement | - |