BSC109

BSC109N10NS3 G vs BSC109N10NS3G vs BSC109N10NS3GATMA1

 
PartNumberBSC109N10NS3 GBSC109N10NS3GBSC109N10NS3GATMA1
DescriptionMOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3Trans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G)MOSFET N-CH 100V 63A 8TDSON
ManufacturerInfineonINFINEOInfineon Technologies
Product CategoryMOSFETIC ChipsFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current63 A--
Rds On Drain Source Resistance10.9 mOhms--
ConfigurationSingle--
TradenameOptiMOS--
PackagingReel-Digi-ReelR Alternate Packaging
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3-OptiMOS
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Part # AliasesBSC109N10NS3GATMA1 BSC19N1NS3GXT SP000778132--
Unit Weight0.010582 oz--
Package Case--8-PowerTDFN
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--PG-TDSON-8
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--78W
Drain to Source Voltage Vdss--100V
Input Capacitance Ciss Vds--2500pF @ 50V
FET Feature--Standard
Current Continuous Drain Id 25°C--63A (Tc)
Rds On Max Id Vgs--10.9 mOhm @ 46A, 10V
Vgs th Max Id--3.5V @ 45μA
Gate Charge Qg Vgs--35nC @ 10V
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC109N10NS3 G MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
BSC109N10NS3GATMA1 MOSFET N-CH 100V 63A 8TDSON
BSC109N10NS3GXT Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP - Tape and Reel (Alt: BSC109N10NS3GATMA1)
BSC109N10NS3 G MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
BSC109N10NS3G Trans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G)
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