PartNumber | BSC109N10NS3 G | BSC109N10NS3G | BSC109N10NS3GATMA1 |
Description | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3 | Trans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G) | MOSFET N-CH 100V 63A 8TDSON |
Manufacturer | Infineon | INFINEO | Infineon Technologies |
Product Category | MOSFET | IC Chips | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TDSON-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 63 A | - | - |
Rds On Drain Source Resistance | 10.9 mOhms | - | - |
Configuration | Single | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 1.27 mm | - | - |
Length | 5.9 mm | - | - |
Series | OptiMOS 3 | - | OptiMOS |
Transistor Type | 1 N-Channel | - | - |
Width | 5.15 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | BSC109N10NS3GATMA1 BSC19N1NS3GXT SP000778132 | - | - |
Unit Weight | 0.010582 oz | - | - |
Package Case | - | - | 8-PowerTDFN |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | PG-TDSON-8 |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 78W |
Drain to Source Voltage Vdss | - | - | 100V |
Input Capacitance Ciss Vds | - | - | 2500pF @ 50V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 63A (Tc) |
Rds On Max Id Vgs | - | - | 10.9 mOhm @ 46A, 10V |
Vgs th Max Id | - | - | 3.5V @ 45μA |
Gate Charge Qg Vgs | - | - | 35nC @ 10V |