 |  | | |
| PartNumber | BSC190N15NS3GATMA1 | BSC190N15NS3G | BSC190N15NS3GS |
| Description | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP T/R | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 19 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 23 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 29 S | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 53 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | BSC190N15NS3 BSC19N15NS3GXT G SP000416636 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC190N15NS3GATMA1 | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | |
| BSC190N15NS3GATMA1 | MOSFET N-CH 150V 50A TDSON-8 | ||
| BSC190N15NS3G | Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP T/R | ||
| BSC190N15NS3GS | New and Original |