PartNumber | BSC320N20NS3 G | BSC320N20NS3 | BSC320N20NS3G |
Description | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | ||
Manufacturer | Infineon | INFINEON | |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TDSON-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 36 A | - | - |
Rds On Drain Source Resistance | 27 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 22 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 125 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.27 mm | - | - |
Length | 5.9 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | OptiMOS 3 Power Transistor | - | - |
Width | 5.15 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 29 S | - | - |
Fall Time | 4 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 9 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 22 ns | - | - |
Typical Turn On Delay Time | 14 ns | - | - |
Part # Aliases | BSC320N20NS3GATMA1 BSC32N2NS3GXT SP000676410 | - | - |
Unit Weight | 0.003527 oz | - | - |