BSC50

BSC500N20NS3 G vs BSC500N20N3G vs BSC500N20NS3G

 
PartNumberBSC500N20NS3 GBSC500N20N3GBSC500N20NS3G
DescriptionMOSFET N-Ch 200V 24A TDSON-8
ManufacturerInfineon-
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTDSON-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current24 A--
Rds On Drain Source Resistance42 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge20 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation96 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel-Reel
Height1.27 mm--
Length5.9 mm--
SeriesBSC500N20-BSC500N20
Transistor Type1 N-Channel-1 N-Channel
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min19 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesBSC500N20NS3GATMA1 BSC5N2NS3GXT SP000998292--
Part Aliases--BSC500N20NS3 BSC500N20NS3GXT G SP000998292
Tradename--OptiMOS
Package Case--TDSON-8
Id Continuous Drain Current--24 A
Vds Drain Source Breakdown Voltage--200 V
Rds On Drain Source Resistance--50 mOhms
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC500N20NS3GATMA1 MOSFET N-Ch 200V 24A TDSON-8
BSC500N20NS3 G MOSFET N-Ch 200V 24A TDSON-8
BSC500N20NS3GATMA1 RF Bipolar Transistors MOSFET N-Ch 200V 24A TDSON-8
BSC500N20N3G New and Original
BSC500N20NS3 G MOSFET N-Ch 200V 24A TDSON-8
BSC500N20NS3G New and Original
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