 | |  | |
| PartNumber | BSC500N20NS3GATMA1 | BSC500N20NS3 G | BSC500N20NS3G |
| Description | MOSFET N-Ch 200V 24A TDSON-8 | MOSFET N-Ch 200V 24A TDSON-8 | |
| Manufacturer | Infineon | Infineon | |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 24 A | 24 A | - |
| Rds On Drain Source Resistance | 50 mOhms | 42 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 15 nC | 20 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 96 W | 96 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3 | BSC500N20 | BSC500N20 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 19 S | 19 S | - |
| Fall Time | 7 ns | 7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 28 ns | 28 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | BSC500N20NS3 BSC5N2NS3GXT G SP000998292 | BSC500N20NS3GATMA1 BSC5N2NS3GXT SP000998292 | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | - | BSC500N20NS3 BSC500N20NS3GXT G SP000998292 |
| Package Case | - | - | TDSON-8 |
| Id Continuous Drain Current | - | - | 24 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 50 mOhms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC500N20NS3GATMA1 | MOSFET N-Ch 200V 24A TDSON-8 | |
| BSC500N20NS3 G | MOSFET N-Ch 200V 24A TDSON-8 | ||
| BSC500N20NS3GATMA1 | RF Bipolar Transistors MOSFET N-Ch 200V 24A TDSON-8 | ||
| BSC500N20NS3 G | MOSFET N-Ch 200V 24A TDSON-8 | ||
| BSC500N20NS3G | New and Original |