BSC7

BSC750N10ND G vs BSC750N10ND vs BSC750N10NDG

 
PartNumberBSC750N10ND GBSC750N10NDBSC750N10NDG
DescriptionMOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2100V,13A,Dual N-Ch Power MOSFET
ManufacturerInfineonFEELINGINFINEON
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance62 mOhms, 62 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge11 nC, 11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation26 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
ProductMOSFET Small Signal--
SeriesOptiMOS 2--
Transistor Type2 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min6.5 S, 6.5 S--
Fall Time3 ns, 3 ns--
Product TypeMOSFET--
Rise Time4 ns, 4 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns, 13 ns--
Typical Turn On Delay Time9 ns, 9 ns--
Part # AliasesBSC750N10NDGATMA1 BSC75N1NDGXT SP000359610--
Unit Weight0.003527 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC750N10ND G MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
BSC750N10NDGATMA1 MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
BSC750N10NDGATMA1 MOSFET 2N-CH 100V 3.2A 8TDSON
BSC750N10ND New and Original
BSC750N10ND G Trans MOSFET N-CH 100V 3.2A 8-Pin TDSON T/R (Alt: BSC750N10ND G)
BSC750N10NDG 100V,13A,Dual N-Ch Power MOSFET
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