PartNumber | BSC750N10ND G | BSC750N10ND | BSC750N10NDG |
Description | MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2 | 100V,13A,Dual N-Ch Power MOSFET | |
Manufacturer | Infineon | FEELING | INFINEON |
Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TDSON-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 13 A | - | - |
Rds On Drain Source Resistance | 62 mOhms, 62 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 11 nC, 11 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 26 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | - | - |
Height | 1.27 mm | - | - |
Length | 5.9 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | OptiMOS 2 | - | - |
Transistor Type | 2 N-Channel | - | - |
Width | 5.15 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 6.5 S, 6.5 S | - | - |
Fall Time | 3 ns, 3 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 4 ns, 4 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns, 13 ns | - | - |
Typical Turn On Delay Time | 9 ns, 9 ns | - | - |
Part # Aliases | BSC750N10NDGATMA1 BSC75N1NDGXT SP000359610 | - | - |
Unit Weight | 0.003527 oz | - | - |