PartNumber | BSC882N03LS G | BSC882N03LS | BSC882N03LSG |
Description | MOSFET N-Ch 34V 100A SON-8 | Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: BSC882N03LS G) | |
Manufacturer | Infineon | Infineon Technologies | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 34 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 2.2 mOhms | - | - |
Vgs Gate Source Voltage | 2 V | - | - |
Qg Gate Charge | 27 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 69 W | - | - |
Configuration | Single | Single | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | - | - |
Length | 5.9 mm | - | - |
Series | BSC882N03 | BSC882N03 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 100 S | - | - |
Fall Time | 9.4 ns | 9.4 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 9 ns | 9 ns | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | BSC882N03LSGATMA1 BSC882N3LSGXT SP000686916 | - | - |
Unit Weight | 0.002677 oz | 0.002677 oz | - |
Part Aliases | - | BSC882N03LSGATMA1 BSC882N03LSGXT SP000686916 | - |
Package Case | - | SON-8 | - |
Pd Power Dissipation | - | 69 W | - |
Vgs Gate Source Voltage | - | 2 V | - |
Id Continuous Drain Current | - | 100 A | - |
Vds Drain Source Breakdown Voltage | - | 34 V | - |
Rds On Drain Source Resistance | - | 2.2 mOhms | - |
Qg Gate Charge | - | 27 nC | - |
Forward Transconductance Min | - | 100 S | - |