BSC882N03L

BSC882N03LS G vs BSC882N03LS vs BSC882N03LSG

 
PartNumberBSC882N03LS GBSC882N03LSBSC882N03LSG
DescriptionMOSFET N-Ch 34V 100A SON-8Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: BSC882N03LS G)
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage34 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.2 mOhms--
Vgs Gate Source Voltage2 V--
Qg Gate Charge27 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W--
ConfigurationSingleSingle-
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesBSC882N03BSC882N03-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min100 S--
Fall Time9.4 ns9.4 ns-
Product TypeMOSFET--
Rise Time9 ns9 ns-
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Part # AliasesBSC882N03LSGATMA1 BSC882N3LSGXT SP000686916--
Unit Weight0.002677 oz0.002677 oz-
Part Aliases-BSC882N03LSGATMA1 BSC882N03LSGXT SP000686916-
Package Case-SON-8-
Pd Power Dissipation-69 W-
Vgs Gate Source Voltage-2 V-
Id Continuous Drain Current-100 A-
Vds Drain Source Breakdown Voltage-34 V-
Rds On Drain Source Resistance-2.2 mOhms-
Qg Gate Charge-27 nC-
Forward Transconductance Min-100 S-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC882N03LS G MOSFET N-Ch 34V 100A SON-8
BSC882N03LSGATMA1 MOSFET N-CH TDSON-8
BSC882N03LS New and Original
BSC882N03LSG Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: BSC882N03LS G)
BSC882N03LS G RF Bipolar Transistors MOSFET N-Ch 34V 100A SON-8
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