BSC886

BSC886N03LS G vs BSC886N03LS vs BSC886N03LSG

 
PartNumberBSC886N03LS GBSC886N03LSBSC886N03LSG
DescriptionMOSFET N-Ch 30V 65A TDSON-8Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineonFEELINGINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current65 A--
Rds On Drain Source Resistance6 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesBSC886N03--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time3.2 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time4.2 ns--
Part # AliasesBSC886N03LSGATMA1 BSC886N3LSGXT SP000475950--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC886N03LS G MOSFET N-Ch 30V 65A TDSON-8
BSC886N03LSGATMA1 MOSFET N-CH 30V 65A TDSON-8
Infineon Technologies
Infineon Technologies
BSC886N03LSGATMA1 MOSFET LV POWER MOS
BSC886N03LS New and Original
BSC886N03LS G Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
BSC886N03LSG Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC886N03LSG E8178 New and Original
BSC886N03LSGATMA1 , TDZF New and Original
Top