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| PartNumber | BSD840NH6327XTSA1 | BSD840NH6327XT | BSD840NH6327 |
| Description | MOSFET N-Ch 20V 880mA SOT-363-6 | MOSFET N-Ch 20V 880mA SOT-363-6 | |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 880 mA | 880 mA | - |
| Rds On Drain Source Resistance | 400 mOhms | 270 mOhms, 270 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | 300 mV | - |
| Vgs Gate Source Voltage | 2.5 V | 8 V | - |
| Qg Gate Charge | 0.26 nC | 260 pC, 260 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW | 500 mW (1/2 W) | - |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.9 mm | 0.9 mm | - |
| Length | 2 mm | 2 mm | - |
| Series | BSD840 | BSD840 | BSD840 |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 1.25 mm | 1.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 2.5 S | 2.5 S, 2.5 S | - |
| Fall Time | 0.9 ns | 900 ps, 900 ps | 0.9 nS |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.2 ns | 2.2 ns, 2.2 ns | 2.2 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 7.8 ns | 7.8 ns, 7.8 ns | 7.8 nS |
| Typical Turn On Delay Time | 1.9 ns | 1.9 ns, 1.9 ns | - |
| Part # Aliases | BSD840N BSD84NH6327XT H6327 SP000917654 | BSD840NH6327XTSA1 SP000917654 | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | 0.000265 oz |
| Part Aliases | - | - | BSD840NH6327XTSA1 SP000917654 |
| Package Case | - | - | SOT-363-6 |
| Pd Power Dissipation | - | - | 500 mW |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | 880 mA |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 400 mOhms |
| Qg Gate Charge | - | - | 0.26 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSD840NH6327XTSA1 | MOSFET N-Ch 20V 880mA SOT-363-6 | |
| BSD840NH6327XT | MOSFET N-Ch 20V 880mA SOT-363-6 | ||
| BSD840NH6327XTSA1 | MOSFET 2N-CH 20V 0.88A SOT363 | ||
| BSD840NH6327 | New and Original | ||
| BSD840NH6327XTSA1-CUT TAPE | New and Original |