 | |  | |
| PartNumber | BSL802SNH6327XTSA1 | BSL806NH6327XTSA1 | BSL802SNL6327HTSA1 |
| Description | MOSFET SMALL SIGNALN-CH | MOSFET SMALL SIGNAL+P-CH | MOSFET N-CH 20V 7.5A TSOP6 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | TSOP-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 22 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 4.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3 mm | 3 mm | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 1.5 mm | 1.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5.5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | BSL802SN H6327 SP001101012 | BSL806N H6327 SP001101014 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL802SNH6327XTSA1 | MOSFET SMALL SIGNALN-CH | |
| BSL806NH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSL802SNL6327HTSA1 | MOSFET N-CH 20V 7.5A TSOP6 | ||
| BSL806NL6327HTSA1 | MOSFET 2N-CH 20V 2.3A 6TSOP | ||
| BSL806NH6327XTSA1 | MOSFET 2 N-CH 20V 2.3A TSOP6-6 | ||
| BSL802SNH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSL802SN | New and Original | ||
| BSL802SN H6327 | New and Original | ||
| BSL802SN-L6327 | New and Original | ||
| BSL802SNL6327 | New and Original | ||
| BSL804N | New and Original | ||
| BSL806N | New and Original | ||
| BSL806N H6327 | New and Original | ||
| BSL806N6327 | New and Original | ||
| BSL806NH6327 | New and Original | ||
| BSL806NL6327 | Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSL802SN L6327 | IGBT Transistors MOSFET N-Ch 20V 7.5A TSOP-6 | ||
| BSL806N L6327 | IGBT Transistors MOSFET N-Ch 20V 2.3A TSOP-6 |