BSM100GAL

BSM100GAL120DLCK vs BSM100GAL100D vs BSM100GAL120DLCKHOSA1

 
PartNumberBSM100GAL120DLCKBSM100GAL100DBSM100GAL120DLCKHOSA1
DescriptionIGBT Modules 1200V 100A CHOPPERIGBT 2 MED POWER 34MM-1
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.1 V--
Continuous Collector Current at 25 C205 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation830 W--
Package / Case32 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height30.5 mm--
Length94 mm--
Width34 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM100GAL120DLCKHOSA1 SP000100477--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSM100GAL120DLCK IGBT Modules 1200V 100A CHOPPER
BSM100GAL120DLCKHOSA1 IGBT 2 MED POWER 34MM-1
BSM100GAL100D New and Original
BSM100GAL120DN2 New and Original
BSM100GAL120DN2K New and Original
BSM100GAL120DLCK IGBT Modules 1200V 100A CHOPPER
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