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| PartNumber | BSM10GD120DN2E3224 | BSM10GD120DN2E3224(6) | BSM10GD120DN2E3224BOSA1 |
| Description | IGBT Modules N-CH 1.2KV 15A | IGBT 2 LOW POWER ECONO2-1 | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Hex | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.7 V | - | - |
| Continuous Collector Current at 25 C | 15 A | - | - |
| Gate Emitter Leakage Current | 120 nA | - | - |
| Pd Power Dissipation | 80 W | - | - |
| Package / Case | EconoPACK 2 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 17 mm | - | - |
| Length | 107.5 mm | - | - |
| Width | 45 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | BSM10GD120DN2E3224BOSA1 SP000100368 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM10GD120DN2E3224 | IGBT Modules N-CH 1.2KV 15A | |
| BSM10GD120DN2E3224BOSA1 | IGBT 2 LOW POWER ECONO2-1 | ||
| BSM10GD120DN2E3224(6) | New and Original | ||
| BSM10GD120DN2E3224 | IGBT Modules N-CH 1.2KV 15A |