BSM200GA120DN

BSM200GA120DN2 vs BSM200GA120DN11 vs BSM200GA120DN2C

 
PartNumberBSM200GA120DN2BSM200GA120DN11BSM200GA120DN2C
DescriptionIGBT Modules 1200V 200A SINGLEIGBT Modules IGBT 1200V 200A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C300 A--
Gate Emitter Leakage Current200 nA--
Pd Power Dissipation1550 W--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height36.5 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM200GA120DN2HOSA1 SP000100725--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSM200GA120DN2 IGBT Modules 1200V 200A SINGLE
BSM200GA120DN2HOSA1 IGBT 2 MED POWER 62MM-2
BSM200GA120DN2FS IGBT Modules IGBT 1200V 200A
BSM200GA120DN11 New and Original
BSM200GA120DN2C IGBT Modules IGBT 1200V 200A
BSM200GA120DN2FS-E32 New and Original
BSM200GA120DN2FS-E3256 New and Original
BSM200GA120DN2FSE3256 New and Original
BSM200GA120DN2S New and Original
BSM200GA120DN2S-3256 New and Original
BSM200GA120DN2S3256 New and Original
BSM200GA120DN2SE New and Original
BSM200GA120DN2SE325 New and Original
BSM200GA120DN2SE3256 New and Original
BSM200GA120DN2S_E3256 New and Original
BSM200GA120DN2 IGBT Modules 1200V 200A SINGLE
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