PartNumber | BSM25GD120DN2E3224 | BSM25GD120DN2 | BSM25GD120DN2BOSA1 |
Description | IGBT Modules N-CH 1.2KV 35A | IGBT Modules 1200V 25A FL BRIDGE | 35 A, 1200 V, N-CHANNEL IGBT |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Modules | IGBT Modules | - |
RoHS | Y | Y | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Configuration | Hex | Hex | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Collector Emitter Saturation Voltage | 2.5 V | 2.5 V | - |
Continuous Collector Current at 25 C | 35 A | 35 A | - |
Gate Emitter Leakage Current | 180 nA | 180 nA | - |
Pd Power Dissipation | 200 W | 200 W | - |
Package / Case | EconoPACK 2 | EconoPACK 2A | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Tray | Tray | - |
Height | 17 mm | 17 mm | - |
Length | 107.5 mm | 107.5 mm | - |
Width | 45 mm | 45 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | BSM25GD120DN2E3224BOSA1 SP000100361 | BSM25GD120DN2BOSA1 SP000100370 | - |
Unit Weight | - | 6.349313 oz | - |