BSM50GD120DL

BSM50GD120DLC vs BSM50GD120DLC-E3224 vs BSM50GD120DLCBOSA1

 
PartNumberBSM50GD120DLCBSM50GD120DLC-E3224BSM50GD120DLCBOSA1
DescriptionIGBT Modules 1200V 50A 3-PHASETrans IGBT Module N-CH
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.4 V--
Continuous Collector Current at 25 C85 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation350 W--
Package / CaseEconoPACK 2A--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM50GD120DLCBOSA1 SP000100393--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSM50GD120DLC IGBT Modules 1200V 50A 3-PHASE
BSM50GD120DLCBOSA1 Trans IGBT Module N-CH
BSM50GD120DLC-E3224 New and Original
BSM50GD120DLCE3224 New and Original
BSM50GD120DLCE3256 New and Original
BSM50GD120DLC IGBT Modules 1200V 50A 3-PHASE
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