PartNumber | BSO615CGHUMA1 | BSO615C G | BSO615CT |
Description | MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 | MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 | MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 3.1 A, 2 A | 3.1 A, 2 A | - |
Rds On Drain Source Resistance | 70 mOhms, 190 mOhms | 70 mOhms, 190 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V, 2 V | 1.2 V, 2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 22.5 nC, 20 nC | 22.5 nC, 20 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2 W | 2 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Series | BSO615 | BSO615 | - |
Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 2.25 S, 1.2 S | 2.25 S, 1.2 S | - |
Fall Time | 18 ns, 90 ns | 18 ns, 90 ns | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 75 ns, 105 ns | 75 ns, 105 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 25 ns, 125 ns | 25 ns, 125 ns | - |
Typical Turn On Delay Time | 16 ns, 24 ns | 16 ns, 24 ns | - |
Part # Aliases | BSO615C BSO615CGXT G SP000216311 | BSO615CGHUMA1 BSO615CGXT SP000216311 | - |
Unit Weight | 0.019048 oz | 0.019048 oz | - |
Tradename | - | SIPMOS | - |