 |  | | |
| PartNumber | BSP295 H6327 | BSP295E6327 | BSP295E6327T |
| Description | MOSFET N-Ch 60V 1.8A SOT-223-3 | MOSFET N-CH 60V 1.8A SOT223 | MOSFET N-CH 60V 1.8A SOT223 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 1.8 A | - | - |
| Rds On Drain Source Resistance | 220 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 17 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP295 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 800 mS | - | - |
| Fall Time | 19 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9.9 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 ns | - | - |
| Typical Turn On Delay Time | 5.4 ns | - | - |
| Part # Aliases | BSP295H6327XTSA1 SP001058618 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP296NH6327XTSA1 | MOSFET N-Ch 100V 1.1A SOT-223-3 | |
| BSP296N H6327 | MOSFET N-Ch 100V 1.1A SOT-223-3 | ||
| BSP296N H6433 | MOSFET SMALL SIGNAL N-CH | ||
| BSP295 H6327 | MOSFET N-Ch 60V 1.8A SOT-223-3 | ||
| BSP296NH6433XTMA1 | MOSFET SMALL SIGNAL N-CH | ||
| BSP296N H6433 | MOSFET SMALL SIGNAL N-CH | ||
| BSP295 H6327 | Trans MOSFET N-CH 60V 1.8A Automotive T/R | ||
| BSP295E6327 | MOSFET N-CH 60V 1.8A SOT223 | ||
| BSP295L6327HTSA1 | MOSFET N-CH 60V 1.8A SOT-223 | ||
| BSP296E6327 | MOSFET N-CH 100V 1.1A SOT223 | ||
| BSP296L6327HTSA1 | MOSFET N-CH 100V 1.1A SOT-223 | ||
| BSP296L6433HTMA1 | MOSFET N-CH 100V 1.1A SOT-223 | ||
| BSP296N H6327 | MOSFET N-Ch 100V 1.1A SOT-223-3 | ||
| BSP296NH6433XTMA1 | MOSFET N-CH 100V 1.1A SOT-223 | ||
| BSP295E6327T | MOSFET N-CH 60V 1.8A SOT223 | ||
| BSP296 E6433 | MOSFET N-CH 100V 1.1A SOT-223 | ||
| BSP295H6327XTSA1 | MOSFET N-CH 60V 1.8A SOT223 | ||
| BSP296NH6327XTSA1 | MOSFET N-CH 100V 1.2A SOT-223 | ||
| BSP296NL6327HTSA1 | MOSFET N-CH 100V 1.2A SOT223-4 | ||
Infineon Technologies |
BSP295H6327XTSA1 | MOSFET N-Ch 60V 1.8A SOT-223-3 | |
| BSP296E6327 | MOSFET N-Ch 100V 1.1A SOT-223-3 | ||
| BSP296E6327-01 | INSTOCK | ||
| BSP254A | MOSFET, P TO-92 AMMO-BOX 2K | ||
| BSP254S | New and Original | ||
| BSP269 | New and Original | ||
| BSP280 | New and Original | ||
| BSP295 L6327 | New and Original | ||
| BSP295L6327XT | New and Original | ||
| BSP296 | N CHANNEL MOSFET, 100V, 1A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:1A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:10V, Thr | ||
| BSP296 E6433 | New and Original | ||
| BSP296 BSP295 SOT223 | New and Original | ||
| BSP296 E6327 | New and Original | ||
| BSP296 E6327 , TEA1791AT | New and Original | ||
| BSP296 L6433 | MOSFET N-Ch 100V 1.1A SOT-223-3 | ||
| BSP296L6327 | Trans MOSFET N-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP296L6327) | ||
| BSP296L6327XT | New and Original | ||
| BSP296N | New and Original | ||
| BSP296N 6327 | New and Original | ||
| BSP296NH6327 | MOSFET, N-CH, 100V, 1.2A, SOT-223-4 | ||
| BSP297 | MOSFET, N, LOGIC, SOT-223 | ||
| BSP297 , TEA1791T/N1 , B | New and Original | ||
| BSP296NH6327XTSA1-CUT TAPE | New and Original | ||
| BSP255 | New and Original | ||
| BSP295 | MOSFET, N CHANNEL, 60V, 1.8A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:1.8A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.22ohm, Rds(on) Test Voltage Vgs:10V, | ||
| BSP295 E6327 | New and Original | ||
| BSP295H6327 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP296 L6327 | MOSFET N-Ch 100V 1.1A SOT-223-3 | ||
| BSP295L6327 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP296L6433 | Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
NXP Semiconductors |
BSP254A,126 | MOSFET P-CH 250V 0.2A SOT54 |