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BSP295L6327HTSA1

BSP295L6327HTSA1
Mfr. #:
BSP295L6327HTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 1.8A SOT-223
Lifecycle:
New from this manufacturer.
Datasheet:
BSP295L6327HTSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
BSP295L, BSP295, BSP29, BSP2, BSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
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***ment14 APAC
MOSFET, N, LOGIC, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Source Voltage Vds:50V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Drive: logic level Housing type: SOT-223 Polarity: N Variants: Enhancement mode Power dissipation: 1.8 W
***ark
MOSFET, N CHANNEL, 60V, 1.8A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.1V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N, LOGIC, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.1V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 1.8A; Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 1.8W; Pulse Current Idm: 6.8A; SMD Marking: BSP 295; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2V
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ZXMP6A13G Series 60 V 390 mOhm P-Channel Enhancement Mode MOSFET - SOT-223
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MOSFET, P CHANNEL, 60V, 1.7A, SOT223; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W
***nell
MOSFET, P CH, 60V, 1.7A, SOT223; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.7A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.39ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***ure Electronics
Single P-Channel 60 V 0.5 Ohms Surface Mount Power Mosfet - SOT-223
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***ark
MOSFET, P CHANNEL, -60V, -1.8A, SOT-223-4, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:3.1W RoHS Compliant: No
***ical
Trans MOSFET N-CH 75V 2.3A Automotive 4-Pin(3+Tab) SOT-223 T/R
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MOSFET, AUTO, N-CH, 75V, 2.3A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Vol; Available until stocks are exhausted
***ark
MOSFET, N-CH, 75V, 2.3A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:2.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***ical
Trans MOSFET P-CH 60V 1.8A 4-Pin (3+Tab) SOT-223 T/R
***et
P-Channel 60V 1.8A (Ta) 2.8W (Ta) Surface Mount SOT-223-4
***el Electronic
Oscillators 25MHz ±20ppm 4-SMD, No Lead Strip SiT8008B XO (Standard) MEMS 0.098Lx0.079W 2.50mmx2.00mm Surface Mount MEMS OSC XO 25.0000MHZ H/LV-CMOS
Part # Mfg. Description Stock Price
BSP295L6327HTSA1
DISTI # BSP295L6327HTSA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 1.8A SOT-223
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSP295L6327HTSA1
    DISTI # BSP295L6327HTSA1CT-ND    		Infineon Technologies AGMOSFET N-CH 60V 1.8A SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSP295L6327HTSA1
      DISTI # BSP295L6327HTSA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 60V 1.8A SOT-223
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSP295 L6327
        DISTI # 726-BSP295L6327        		Infineon Technologies AGMOSFET N-Ch 60V 1.8A SOT-223-3
        RoHS: Compliant        		0
          BSP295L6327HTSA1Infineon Technologies AGPower Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		49000
          • 1000:$0.3300
          • 500:$0.3500
          • 100:$0.3600
          • 25:$0.3800
          • 1:$0.4100
          Image Part # Description
          BSP295L6327

          Mfr.#: BSP295L6327

          OMO.#: OMO-BSP295L6327-1190

          		 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          BSP295L6327HTSA1

          Mfr.#: BSP295L6327HTSA1

          OMO.#: OMO-BSP295L6327HTSA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 60V 1.8A SOT-223
          BSP295L6327XT

          Mfr.#: BSP295L6327XT

          OMO.#: OMO-BSP295L6327XT-1190

          		 New and Original
          Availability
          Stock:
          Available
          On Order:
          4500
          Enter Quantity:
          Current price of BSP295L6327HTSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Reference price (USD)
          Quantity
          Unit Price
          Ext. Price
          1
          $0.50
          $0.50
          10
          $0.47
          $4.70
          100
          $0.45
          $44.55
          500
          $0.42
          $210.40
          1000
          $0.40
          $396.00
          Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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