PartNumber | BSP295 H6327 | BSP295E6327 | BSP295E6327T |
Description | MOSFET N-Ch 60V 1.8A SOT-223-3 | MOSFET N-CH 60V 1.8A SOT223 | MOSFET N-CH 60V 1.8A SOT223 |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-223-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 1.8 A | - | - |
Rds On Drain Source Resistance | 220 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 17 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.8 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.6 mm | - | - |
Length | 6.5 mm | - | - |
Series | BSP295 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 3.5 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 800 mS | - | - |
Fall Time | 19 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 9.9 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 27 ns | - | - |
Typical Turn On Delay Time | 5.4 ns | - | - |
Part # Aliases | BSP295H6327XTSA1 SP001058618 | - | - |
Unit Weight | 0.003951 oz | - | - |