BSP29

BSP295 H6327 vs BSP295E6327 vs BSP295E6327T

 
PartNumberBSP295 H6327BSP295E6327BSP295E6327T
DescriptionMOSFET N-Ch 60V 1.8A SOT-223-3MOSFET N-CH 60V 1.8A SOT223MOSFET N-CH 60V 1.8A SOT223
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1.8 A--
Rds On Drain Source Resistance220 mOhms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage20 V--
Qg Gate Charge17 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
SeriesBSP295--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min800 mS--
Fall Time19 ns--
Product TypeMOSFET--
Rise Time9.9 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time5.4 ns--
Part # AliasesBSP295H6327XTSA1 SP001058618--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSP296NH6327XTSA1 MOSFET N-Ch 100V 1.1A SOT-223-3
BSP296N H6327 MOSFET N-Ch 100V 1.1A SOT-223-3
BSP296N H6433 MOSFET SMALL SIGNAL N-CH
BSP297 H6327 MOSFET N-Ch 200V 660mA SOT-223-3
BSP295 H6327 MOSFET N-Ch 60V 1.8A SOT-223-3
BSP296NH6433XTMA1 MOSFET SMALL SIGNAL N-CH
BSP295E6327 MOSFET N-CH 60V 1.8A SOT223
BSP295L6327HTSA1 MOSFET N-CH 60V 1.8A SOT-223
BSP296E6327 MOSFET N-CH 100V 1.1A SOT223
BSP296L6327HTSA1 MOSFET N-CH 100V 1.1A SOT-223
BSP296L6433HTMA1 MOSFET N-CH 100V 1.1A SOT-223
BSP297 E6327 MOSFET N-CH 200V 660MA SOT-223
BSP296NH6433XTMA1 MOSFET N-CH 100V 1.1A SOT-223
BSP295E6327T MOSFET N-CH 60V 1.8A SOT223
BSP296 E6433 MOSFET N-CH 100V 1.1A SOT-223
BSP295H6327XTSA1 MOSFET N-CH 60V 1.8A SOT223
BSP296NH6327XTSA1 MOSFET N-CH 100V 1.2A SOT-223
BSP296NL6327HTSA1 MOSFET N-CH 100V 1.2A SOT223-4
Infineon Technologies
Infineon Technologies
BSP295H6327XTSA1 MOSFET N-Ch 60V 1.8A SOT-223-3
BSP296E6327 MOSFET N-Ch 100V 1.1A SOT-223-3
BSP296N H6433 MOSFET SMALL SIGNAL N-CH
BSP296E6327-01 INSTOCK
BSP297H6327 200V,0.66A,N-Ch Small-Signal MOSFET
BSP295 MOSFET, N CHANNEL, 60V, 1.8A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:1.8A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.22ohm, Rds(on) Test Voltage Vgs:10V,
BSP295 L6327 New and Original
BSP295 E6327 New and Original
BSP295 H6327 Trans MOSFET N-CH 60V 1.8A Automotive T/R
BSP295H6327 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP295L6327 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP295L6327XT New and Original
BSP296 N CHANNEL MOSFET, 100V, 1A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:1A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:10V, Thr
BSP296 E6433 New and Original
BSP296 BSP295 SOT223 New and Original
BSP296 E6327 New and Original
BSP296 E6327 , TEA1791AT New and Original
BSP296 L6327 MOSFET N-Ch 100V 1.1A SOT-223-3
BSP296 L6433 MOSFET N-Ch 100V 1.1A SOT-223-3
BSP296L6327 Trans MOSFET N-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP296L6327)
BSP296L6327XT New and Original
BSP296L6433 Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP296N New and Original
BSP296N 6327 New and Original
BSP296N H6327 MOSFET N-Ch 100V 1.1A SOT-223-3
BSP296NH6327 MOSFET, N-CH, 100V, 1.2A, SOT-223-4
BSP297 MOSFET, N, LOGIC, SOT-223
BSP297 , TEA1791T/N1 , B New and Original
BSP297 H6327 Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
BSP297 L6327 MOSFET N-Ch 200V 660mA SOT-223-3
BSP297E6327 0.66 A, 200 V, 1.8 OHM, N-CHANNEL, SI, POWER, MOSFET
BSP296NH6327XTSA1-CUT TAPE New and Original
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