BSP135H63

BSP135H6327XTSA1 vs BSP135H6327

 
PartNumberBSP135H6327XTSA1BSP135H6327
DescriptionMOSFET N-Ch 600V 120mA SOT-223-3
ManufacturerInfineonInfineon Technologies
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single
RoHSY-
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePG-SOT-223-4-
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current120 mA-
Rds On Drain Source Resistance45 Ohms-
Vgs th Gate Source Threshold Voltage2.1 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge3.7 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.8 W-
ConfigurationSingleSingle
Channel ModeDepletionDepletion
PackagingReelReel
Height1.6 mm-
Length6.5 mm-
SeriesBSP135BSP135
Transistor Type1 N-Channel1 N-Channel
Width3.5 mm-
BrandInfineon Technologies-
Forward Transconductance Min80 mS-
Development KitEVALLEDICL5101E1-
Fall Time182 ns182 ns
Product TypeMOSFET-
Rise Time5.6 ns5.6 ns
Factory Pack Quantity1000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time28 ns28 ns
Typical Turn On Delay Time5.4 ns5.4 ns
Part # AliasesBSP135 H6327 SP001058812-
Unit Weight0.003951 oz0.008826 oz
Part Aliases-BSP135 H6327 SP001058812
Package Case-SOT-223-4
Pd Power Dissipation-1.8 W
Vgs Gate Source Voltage-20 V
Id Continuous Drain Current-120 mA
Vds Drain Source Breakdown Voltage-600 V
Vgs th Gate Source Threshold Voltage-- 1.4 V
Rds On Drain Source Resistance-25 Ohms
Qg Gate Charge-3.7 nC
Forward Transconductance Min-0.08 S
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSP135H6327XTSA1 MOSFET N-Ch 600V 120mA SOT-223-3
BSP135H6327XTSA1 IGBT Transistors MOSFET N-Ch 600V 120mA SOT-223-3
BSP135H6327 New and Original
Top