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| PartNumber | BSP170PH6327XTSA1 | BSP170PH6327 | BSP170PH6327XTSA1-CUT TAPE |
| Description | MOSFET P-Ch -60V -1.9A SOT-223-3 | -60V,-1.9A,P-Ch Small-Signal MOSFET | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 1.9 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | - 10 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP170 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 1.3 S | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 28 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 92 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Part # Aliases | BSP170P H6327 SP001058608 | - | - |
| Unit Weight | 0.007055 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP170PH6327XTSA1 | MOSFET P-Ch -60V -1.9A SOT-223-3 | |
| BSP170PH6327XTSA1 | MOSFET P-CH 60V 1.9A SOT223 | ||
| BSP170PH6327 | -60V,-1.9A,P-Ch Small-Signal MOSFET | ||
| BSP170PH6327XTSA1-CUT TAPE | New and Original |