BSP31

BSP317P H6327 vs BSP317PE6327 vs BSP317PE6327T

 
PartNumberBSP317P H6327BSP317PE6327BSP317PE6327T
DescriptionMOSFET P-Ch -250V -430mA SOT-223-3MOSFET P-CH 250V 0.43A SOT223MOSFET P-CH 250V 0.43A SOT223
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current430 mA--
Rds On Drain Source Resistance3 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge- 15.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
SeriesBSP317--
Transistor Type1 P-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min380 mS--
Fall Time67 ns--
Product TypeMOSFET--
Rise Time11.1 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time254 ns--
Typical Turn On Delay Time5.7 ns--
Part # AliasesBSP317PH6327XTSA1 SP001058758--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSP318S H6327 MOSFET N-Ch 60V 2.6A SOT-223-3
BSP318SH6327XTSA1 MOSFET N-Ch 60V 2.6A SOT-223-3
BSP317PH6327XTSA1 MOSFET P-Ch -250V -430mA SOT-223-3
BSP317P H6327 MOSFET P-Ch -250V -430mA SOT-223-3
BSP317PH6327XTSA1 MOSFET P-CH 250V 0.43A SOT223
BSP317PL6327HTSA1 MOSFET P-CH 250V 0.43A SOT-223
BSP318S E6327 MOSFET N-CH 60V 2.6A SOT-223
BSP318S H6327 Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R
BSP318SH6327XTSA1 MOSFET N-CH 60V 2.6A
BSP318SL6327HTSA1 MOSFET N-CH 60V 2.6A SOT-223
BSP317PE6327 MOSFET P-CH 250V 0.43A SOT223
BSP317PE6327T MOSFET P-CH 250V 0.43A SOT223
BSP317 MOSFET Transistor, P-Channel, SOT-223
BSP317P New and Original
BSP318 New and Original
BSP318S MOSFET, N CHANNEL, 60V, 2.6A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:4.5V,
BSP318SH6327 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP319 New and Original
BSP319S New and Original
BSP317PL6327 Trans MOSFET P-CH 250V 0.43A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP317PL6327)
BSP318 , TEA1795T/N1 , B New and Original
BSP318S L6327 MOSFET N-Ch 60V 2.6A SOT-223-3
BSP318S-E6327 INSTOCK
BSP318SE6327 MOSFET N-Ch 60V 2.6A SOT-223-3
BSP318SL6327 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP319P New and Original
BSP31T/R New and Original
BSP31TA Bipolar Transistors - BJT
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