 | |  | |
| PartNumber | BSP318S H6327 | BSP318SH6327XTSA1 | BSP318S E6327 |
| Description | MOSFET N-Ch 60V 2.6A SOT-223-3 | MOSFET N-Ch 60V 2.6A SOT-223-3 | MOSFET N-CH 60V 2.6A SOT-223 |
| Manufacturer | Infineon | Infineon | INFINEON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-SOT-223-4 | SOT-223-4 | TO-261-4, TO-261AA |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 2.6 A | 2.6 A | - |
| Rds On Drain Source Resistance | 90 mOhms | 90 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 14 nC | 14 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.8 W | 1.8 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Tape & Reel (TR) |
| Height | 1.6 mm | 1.6 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | BSP318 | BSP318 | SIPMOS |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.5 mm | 3.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 2.4 S | 2.4 S | - |
| Fall Time | 15 ns | 15 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | 15 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Part # Aliases | BSP318SH6327XTSA1 SP001058838 | BSP318S H6327 SP001058838 | - |
| Unit Weight | 0.003951 oz | 0.003951 oz | - |
| Part Status | - | - | Obsolete |
| FET Type | - | - | N-Channel |
| Drain to Source Voltage (Vdss) | - | - | 60V |
| Current Continuous Drain (Id) @ 25°C | - | - | 2.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 4.5V, 10V |
| Vgs(th) (Max) @ Id | - | - | 2V @ 20A |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 20nC @ 10V |
| Vgs (Max) | - | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 380pF @ 25V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | - | - | 90 mOhm @ 2.6A, 10V |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-SOT223-4 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP318S H6327 | MOSFET N-Ch 60V 2.6A SOT-223-3 | |
| BSP318SH6327XTSA1 | MOSFET N-Ch 60V 2.6A SOT-223-3 | ||
| BSP318S E6327 | MOSFET N-CH 60V 2.6A SOT-223 | ||
| BSP318SH6327XTSA1 | MOSFET N-CH 60V 2.6A | ||
| BSP318SL6327HTSA1 | MOSFET N-CH 60V 2.6A SOT-223 | ||
| BSP318 | New and Original | ||
| BSP318 , TEA1795T/N1 , B | New and Original | ||
| BSP318S | MOSFET, N CHANNEL, 60V, 2.6A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:4.5V, | ||
| BSP318S H6327 | Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
| BSP318S L6327 | MOSFET N-Ch 60V 2.6A SOT-223-3 | ||
| BSP318S-E6327 | INSTOCK | ||
| BSP318SE6327 | MOSFET N-Ch 60V 2.6A SOT-223-3 | ||
| BSP318SH6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP318SL6327 | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |