PartNumber | BSP322PH6327XTSA1 | BSP322PH6327 |
Description | MOSFET P-Ch -100V 1A SOT-223-3 | |
Manufacturer | Infineon | Infineon Technologies |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PG-SOT-223-4 | - |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - |
Id Continuous Drain Current | 1 A | - |
Rds On Drain Source Resistance | 800 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | - |
Vgs Gate Source Voltage | 10 V | - |
Qg Gate Charge | 12.4 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 1.8 W | - |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Reel | Reel |
Height | 1.6 mm | - |
Length | 6.5 mm | - |
Series | BSP322 | BSP322 |
Transistor Type | 1 P-Channel | 1 P-Channel |
Width | 3.5 mm | - |
Brand | Infineon Technologies | - |
Forward Transconductance Min | 0.7 S | - |
Fall Time | 8.3 ns | 8.3 ns |
Product Type | MOSFET | - |
Rise Time | 4.3 ns | 4.3 ns |
Factory Pack Quantity | 1000 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 21.2 ns | 21.2 ns |
Typical Turn On Delay Time | 4.6 ns | 4.6 ns |
Part # Aliases | BSP322P H6327 SP001058784 | - |
Unit Weight | 0.003951 oz | 0.008826 oz |
Part Aliases | - | BSP322P H6327 SP001058784 |
Package Case | - | SOT-223-4 |
Pd Power Dissipation | - | 1.8 W |
Vgs Gate Source Voltage | - | +/- 20 V |
Id Continuous Drain Current | - | - 1 A |
Vds Drain Source Breakdown Voltage | - | - 100 V |
Vgs th Gate Source Threshold Voltage | - | - 2 V |
Rds On Drain Source Resistance | - | 1 Ohms |
Qg Gate Charge | - | 12.4 nC |
Forward Transconductance Min | - | 0.7 S |