 |  | |
| PartNumber | BSR316PL6327HTSA1 | BSR316PL6327 |
| Description | MOSFET P-Ch -100V -360mA SOT-23-3 | |
| Manufacturer | Infineon | SON/INFINEON |
| Product Category | MOSFET | FETs - Single |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 360 mA | - |
| Rds On Drain Source Resistance | 1.3 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 7 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.1 mm | - |
| Length | 3 mm | - |
| Series | BSR316 | - |
| Transistor Type | 1 P-Channel | - |
| Width | 1.6 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 300 mS | - |
| Fall Time | 26 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 6 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 71 ns | - |
| Typical Turn On Delay Time | 5 ns | - |
| Part # Aliases | BSR316P BSR316PL6327XT L6327 SP000265407 | - |
| Unit Weight | 0.000282 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSR316PL6327HTSA1 | MOSFET P-Ch -100V -360mA SOT-23-3 | |
| BSR316PL6327 | New and Original | ||
Infineon Technologies |
BSR316PL6327HTSA1 | MOSFET P-CH 100V 0.36A SC-59 |