PartNumber | BSS119N H6327 | BSS119NH6433XTMA1 | BSS119NH6327XTSA1 |
Description | MOSFET N-Ch 100V 190mA SOT-23-3 | MOSFET OptiMOS Sm-Signal 100V 6Ohm 190mA | MOSFET N-CH 100V 0.19A SOT-23 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 190 mA | - | - |
Rds On Drain Source Resistance | 2.406 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 600 pC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 500 mW (1/2 W) | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | - |
Height | 1.1 mm | 1.1 mm | - |
Length | 2.9 mm | 2.9 mm | - |
Series | BSS119 | BSS119 | - |
Transistor Type | 1 N-Channel | 1 P-Channel | - |
Width | 1.3 mm | 1.3 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 350 mS | - | - |
Fall Time | 18.8 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.3 ns | - | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 7 ns | - | - |
Typical Turn On Delay Time | 2.7 ns | - | - |
Part # Aliases | BSS119NH6327XTSA1 SP000870644 | BSS119N H6433 SP000996564 | - |
Unit Weight | 0.000282 oz | 0.000282 oz | - |