BSS119N

BSS119N H6327 vs BSS119NH6433XTMA1 vs BSS119NH6327XTSA1

 
PartNumberBSS119N H6327BSS119NH6433XTMA1BSS119NH6327XTSA1
DescriptionMOSFET N-Ch 100V 190mA SOT-23-3MOSFET OptiMOS Sm-Signal 100V 6Ohm 190mAMOSFET N-CH 100V 0.19A SOT-23
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelP-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current190 mA--
Rds On Drain Source Resistance2.406 Ohms--
Vgs th Gate Source Threshold Voltage1.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge600 pC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
Height1.1 mm1.1 mm-
Length2.9 mm2.9 mm-
SeriesBSS119BSS119-
Transistor Type1 N-Channel1 P-Channel-
Width1.3 mm1.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min350 mS--
Fall Time18.8 ns--
Product TypeMOSFETMOSFET-
Rise Time3.3 ns--
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time7 ns--
Typical Turn On Delay Time2.7 ns--
Part # AliasesBSS119NH6327XTSA1 SP000870644BSS119N H6433 SP000996564-
Unit Weight0.000282 oz0.000282 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSS119N H6327 MOSFET N-Ch 100V 190mA SOT-23-3
BSS119NH6433XTMA1 MOSFET OptiMOS Sm-Signal 100V 6Ohm 190mA
BSS119NH6327XTSA1 MOSFET N-CH 100V 0.19A SOT-23
BSS119NH6433XTMA1 MOSFET N-CH 100V 190MA SOT23-3
BSS119N H6327 Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R
BSS119N H7796 - Bulk (Alt: BSS119N H7796)
BSS119NH6327 Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R (Alt: BSS119N H6327)
BSS119NH7796 - Bulk (Alt: BSS119NH7796)
BSS119NH7978XTSA1 - Bulk (Alt: BSS119NH7978XTSA1)
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