 | | | |
| PartNumber | BSS123NH6327XTSA1 | BSS123NH6433XTMA1 | BSS123NH6327XT |
| Description | MOSFET N-Ch 100V 190mA SOT-23-3 | MOSFET N-Ch 100V 190mA SOT-23-3 | MOSFET N-Ch 100V 190mA SOT-23-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 190 mA | 190 mA | 190 mA |
| Rds On Drain Source Resistance | 6 Ohms | 2.4 Ohms | 2.4 Ohms |
| Vgs th Gate Source Threshold Voltage | 800 mV | 800 mV | 800 mV |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 0.6 nC | 900 pC | 900 pC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Series | BSS123 | BSS123 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 1.3 mm | 1.3 mm | 1.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 22 ns | 22 ns | 22 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3.2 ns | 3.2 ns | 3.2 ns |
| Factory Pack Quantity | 3000 | 10000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 7.4 ns | 7.4 ns | 7.4 ns |
| Typical Turn On Delay Time | 2.3 ns | 2.3 ns | 2.3 ns |
| Part # Aliases | BSS123N BSS123NH6327XT H6327 SP000870646 | BSS123N BSS123NH6433XT H6433 SP000939268 | BSS123N BSS123NH6327XTSA1 H6327 SP000870646 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Forward Transconductance Min | - | 410 mS | 410 mS |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS123NH6327XTSA1 | MOSFET N-Ch 100V 190mA SOT-23-3 | |
| BSS123NH6433XTMA1 | MOSFET N-Ch 100V 190mA SOT-23-3 | ||
| BSS123NH6327XT | MOSFET N-Ch 100V 190mA SOT-23-3 | ||
| BSS123NH6327XTSA1 | MOSFET N-CH 100V 0.19A SOT-23 | ||
| BSS123NH6433XTMA1 | MOSFET N-CH 100V 0.19A SOT-23 | ||
| BSS123NH6327 | 190 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | ||
| BSS123NH6327S | New and Original | ||
| BSS123NH6327XTSA1INFINEO | New and Original | ||
| BSS123NH6433 | New and Original | ||
| BSS123NH6327XTSA1-CUT TAPE | New and Original |